Kingston KVR16N11/8-SP 8GB vs Transcend Information TS2GSH64V6B 16GB

总分

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

总分

Transcend Information TS2GSH64V6B 16GB

Transcend Information TS2GSH64V6B 16GB

差异规格评论

差异

Kingston KVR16N11/8-SP 8GB

需要考虑的原因
Kingston KVR16N11/8-SP 8GB

报告一个错误

Transcend Information TS2GSH64V6B 16GB

需要考虑的原因
Transcend Information TS2GSH64V6B 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

16.4 13.9

测试中的平均数值
更快的写入速度，GB/s

14.4 9.5

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Kingston KVR16N11/8-SP 8GB

Transcend Information TS2GSH64V6B 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

13.9 16.4
写入速度，GB/s

9.5 14.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2432 2978

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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A-DATA Technology AO1P32NC8T1-BZ4SHD 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CMK8GX4M2B3600C18 4GB

Corsair CMK8GX4M2B3600C18 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

V-Color Technology Inc. TC416G24D817 16GB

V-Color Technology Inc. TC416G24D817 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Crucial Technology BL16G32C16U4RL.M16FE 16GB

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Samsung M378B1G73EB0-CK0 8GB

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Crucial Technology CT4G4SFS8213.C8FBD1 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB

Crucial Technology CT8G4DFS8213.C8FBD1 8GB