Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Crucial Technology BLT4G4D26AFTA.8FBD 4GB

总分

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

差异规格评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值
更快的写入速度，GB/s

2,077.3 12.9

测试中的平均数值

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 61

左右 -165% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 23
读取速度，GB/s

3,835.2 16.5
写入速度，GB/s

2,077.3 12.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

606 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMD16GX4M4B3000C14 4GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Samsung M378B5673EH1-CF8 2GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Good Wealth Technology Ltd. 8GB

Good Wealth Technology Ltd. 8GB