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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-3200C16-16GRS 16GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs G Skill Intl F4-3200C16-16GRS 16GB

总分
star star star star star
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分
star star star star star
G Skill Intl F4-3200C16-16GRS 16GB

G Skill Intl F4-3200C16-16GRS 16GB

差异 规格 评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB 需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 20.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,077.3 left arrow 15.8
    测试中的平均数值
G Skill Intl F4-3200C16-16GRS 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GRS 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 61
    左右 -221% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-3200C16-16GRS 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 19
  • 读取速度，GB/s
    3,835.2 left arrow 20.9
  • 写入速度，GB/s
    2,077.3 left arrow 15.8
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    606 left arrow 3801

Nanya Technology M2Y1G64TU8HB0B-25C 1GB RAM的比较

SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 99U5701-036.A00G 16GB

G Skill Intl F4-3200C16-16GRS 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX2666C15D4/4G 4GB
Kingston KHX2666C15D4/4G 4GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-3200C16-16GRS 16GB
G Skill Intl F4-3200C16-16GRS 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology DDR4 3200 8GB
A-DATA Technology DDR4 3200 8GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M393A1K43BB0-CRC 8GB
内存RAM
Samsung M378A1K43DB2-CTD 8GB
Samsung M378A1K43DB2-CTD 8GB
Corsair CMW16GX4M2D3600C18 8GB
Corsair CMW16GX4M2D3600C18 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston KHX2666C16/16G 16GB
Kingston KHX2666C16/16G 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KHX3200C20S4/8G 8GB
Kingston KHX3200C20S4/8G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Corsair CMW128GX4M8C3000C16 16GB
Corsair CMW128GX4M8C3000C16 16GB
内存RAM
AMD R534G1601U1S 4GB
AMD R534G1601U1S 4GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM