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Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Samsung M378A2K43DB1-CTD 16GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB vs Samsung M378A2K43DB1-CTD 16GB

总分
star star star star star
Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

总分
star star star star star
Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

差异 规格 评论

差异

Nanya Technology M2Y1G64TU8HB0B-25C 1GB 需要考虑的原因
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,077.3 left arrow 11.9
    测试中的平均数值
Samsung M378A2K43DB1-CTD 16GB 需要考虑的原因
Samsung M378A2K43DB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 61
    左右 -69% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Samsung M378A2K43DB1-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    61 left arrow 36
  • 读取速度，GB/s
    3,835.2 left arrow 15.3
  • 写入速度，GB/s
    2,077.3 left arrow 11.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    606 left arrow 2981

Nanya Technology M2Y1G64TU8HB0B-25C 1GB RAM的比较

SK Hynix HYMP512U64CP8-Y5 1GB
Kingston 99U5701-036.A00G 16GB

Samsung M378A2K43DB1-CTD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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Samsung M378A2K43DB1-CTD 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM