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Nanya Technology M2Y51264TU88A2B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
比较
Nanya Technology M2Y51264TU88A2B-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
总分
Nanya Technology M2Y51264TU88A2B-3C 512MB
总分
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88A2B-3C 512MB
报告一个错误
更快的写入速度,GB/s
874.3
9.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
81
左右 -170% 更低的延时
更快的读取速度,GB/s
14.5
1
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88A2B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
81
30
读取速度,GB/s
1,885.7
14.5
写入速度,GB/s
874.3
9.0
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
277
2374
Nanya Technology M2Y51264TU88A2B-3C 512MB RAM的比较
Kingston 99U5315-012.A00LF 512MB
Kingston 9905598-009.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Nanya Technology M2Y51264TU88B0B-3C 512MB
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Gloway International Co. Ltd. TYA4U2400D17081C 8GB
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Corsair CM4X8GE2666C16K4 8GB
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
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Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Unifosa Corporation HU564404EP0200 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
报告一个错误
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