RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Apacer Technology AQD-D4U8GN24-SE 8GB
比较
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Apacer Technology AQD-D4U8GN24-SE 8GB
总分
Nanya Technology M2Y51264TU88B0B-3C 512MB
总分
Apacer Technology AQD-D4U8GN24-SE 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
更快的读取速度,GB/s
3
17.5
测试中的平均数值
需要考虑的原因
Apacer Technology AQD-D4U8GN24-SE 8GB
报告一个错误
低于PassMark测试中的延时,ns
23
54
左右 -135% 更低的延时
更快的写入速度,GB/s
13.4
1,308.1
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Apacer Technology AQD-D4U8GN24-SE 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
54
23
读取速度,GB/s
3,573.5
17.5
写入速度,GB/s
1,308.1
13.4
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
371
3041
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB RAM的比较
A-DATA Technology AD5U480016G-B 16GB
Advantech Co Ltd SQR-UD4N16G2K6SNCB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B5270CH0-CH9 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD128GX4M8A2400C14 16GB
Samsung M378A5244CB0-CTD 4GB
Micron Technology M471A1K43CB1-CTD 8GB
A-DATA Technology DQVE1908 512MB
Crucial Technology BLS8G4S240FSDK.8FD 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-4000C16-16GVKA 16GB
PNY Electronics PNY 2GB
A-DATA Technology AM2L16BC8R2-B0XS 8GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
TwinMOS 8DHE3MN8-HATP 2GB
G Skill Intl F4-3733C17-4GTZ 4GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Wilk Elektronik S.A. GR2666D464L19S/8G 8GB
Samsung M471A5244CB0-CWE 4GB
G Skill Intl F4-4000C18-16GTRS 16GB
报告一个错误
×
Bug description
Source link