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Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KF3200C20S4/8G 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB vs Kingston KF3200C20S4/8G 8GB

总分
star star star star star
Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分
star star star star star
Kingston KF3200C20S4/8G 8GB

Kingston KF3200C20S4/8G 8GB

差异 规格 评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB 需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.4
    测试中的平均数值
Kingston KF3200C20S4/8G 8GB 需要考虑的原因
Kingston KF3200C20S4/8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 54
    左右 -26% 更低的延时
  • 更快的写入速度，GB/s
    13.3 left arrow 1,308.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KF3200C20S4/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 43
  • 读取速度，GB/s
    3,573.5 left arrow 15.4
  • 写入速度，GB/s
    1,308.1 left arrow 13.3
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    371 left arrow 2776

Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较

Nanya Technology M2Y51264TU88B0B-37 512MB

Kingston KF3200C20S4/8G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M393B2G70BH0-CH9 16GB
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内存RAM
Kingston 99U5584-001.A00LF 4GB
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SK Hynix HMA81GS6DJR8N-VK 8GB
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内存RAM
Nanya Technology M2Y51264TU88B0B-3C 512MB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston KF3200C20S4/8G 8GB
Kingston KF3200C20S4/8G 8GB
内存RAM
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内存RAM
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内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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内存RAM
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