RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A2K43BB1-CRC 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Samsung M378A2K43BB1-CRC 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 31
    左右 23% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 10.8
    测试中的平均数值
Samsung M378A2K43BB1-CRC 16GB 需要考虑的原因
Samsung M378A2K43BB1-CRC 16GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Samsung M378A2K43BB1-CRC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 31
  • 读取速度，GB/s
    16.0 left arrow 16.0
  • 写入速度，GB/s
    12.5 left arrow 10.8
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2816

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Samsung M378A2K43BB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965669-018.A00G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMD16GX4M4A2800C16 4GB
Corsair CMD16GX4M4A2800C16 4GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
SK Hynix HMAA4GS6MJR8N-VK 32GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston ACR24D4U7S8MB-8 8GB
Kingston ACR24D4U7S8MB-8 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Corsair CMW128GX4M4D3600C18 32GB
Corsair CMW128GX4M4D3600C18 32GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Kingston ACR26D4U9S8ME-8 8GB
Kingston ACR26D4U9S8ME-8 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMT64GX4M4Z3600C18 16GB
Corsair CMT64GX4M4Z3600C18 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
OCMEMORY OCM2933CL16-16GBH 16GB
OCMEMORY OCM2933CL16-16GBH 16GB
内存RAM
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB
Corsair CM4X16GE2133C13K8 16GB
Corsair CM4X16GE2133C13K8 16GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Corsair CMW64GX4M2D3600C18 32GB
Corsair CMW64GX4M2D3600C18 32GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston XW21KG-HYD-NX 8GB
Kingston XW21KG-HYD-NX 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMK128GX4M8X3600C18 16GB
Corsair CMK128GX4M8X3600C18 16GB
内存RAM