Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Samsung M378A2K43BB1-CRC 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 31

左右 13% 更低的延时
更快的读取速度，GB/s

16.7 16

测试中的平均数值
更快的写入速度，GB/s

11.8 10.8

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Samsung M378A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M378A2K43BB1-CRC 16GB

报告一个错误

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 31
读取速度，GB/s

16.7 16.0
写入速度，GB/s

11.8 10.8
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2816

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

G Skill Intl F4-3200C16-16GTRS 16GB

G Skill Intl F4-3200C16-16GTRS 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

Samsung M471B5773DH0-CH9 2GB

Samsung M471B5773DH0-CH9 2GB

G Skill Intl F4-2800C15-4GTZ 4GB

G Skill Intl F4-2800C15-4GTZ 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Micron Technology 16ATF2G64HZ-2G1B1 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KF3600C18D4/16GX 16GB

Kingston KF3600C18D4/16GX 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) PSD48G213382 8GB

Patriot Memory (PDP Systems) PSD48G213382 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Crucial Technology BL8G26C16U4R.8FD 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston 9965662-008.A01G 16GB

Kingston 9965662-008.A01G 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

V-Color Technology Inc. TD416G26D819-VC 16GB

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology CB8GS2666.C8ET 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB