Nanya Technology M2Y51264TU88B0B-3C 512MB vs Corsair CMWX8GF2933Z19W8 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Corsair CMWX8GF2933Z19W8 8GB

Corsair CMWX8GF2933Z19W8 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 18.6

测试中的平均数值

Corsair CMWX8GF2933Z19W8 8GB

需要考虑的原因
Corsair CMWX8GF2933Z19W8 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 54

左右 -93% 更低的延时
更快的写入速度，GB/s

14.4 1,308.1

测试中的平均数值
更高的内存带宽，mbps

23400 5300

左右 4.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Corsair CMWX8GF2933Z19W8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 28
读取速度，GB/s

3,573.5 18.6
写入速度，GB/s

1,308.1 14.4
内存带宽，mbps

5300 23400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-23400, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
排名PassMark (越多越好)

371 3491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264BD1339.M16F 4GB

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Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Chun Well Technology Holding Limited MD4U0836165BCW 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMK256GX4M8A2400C16 32GB

Corsair CMK256GX4M8A2400C16 32GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung M393A4K40CB1-CRC 32GB

Samsung M393A4K40CB1-CRC 32GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB