Nanya Technology M2Y51264TU88B0B-3C 512MB vs Crucial Technology BLS8G4D26BFSC.16FD2 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 18.4

测试中的平均数值

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 54

左右 -100% 更低的延时
更快的写入速度，GB/s

14.3 1,308.1

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Crucial Technology BLS8G4D26BFSC.16FD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 27
读取速度，GB/s

3,573.5 18.4
写入速度，GB/s

1,308.1 14.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

371 3388

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Avant Technology F6451U64F9333G 4GB

Avant Technology F6451U64F9333G 4GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Crucial Technology BLS4G4D240FSA.8FBD 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Avant Technology J642GU42J5213N4 16GB

Avant Technology J642GU42J5213N4 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMW16GX4M2Z4000C18 8GB

Corsair CMW16GX4M2Z4000C18 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Crucial Technology BLT4G4D26AFTA.8FADG 4GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Crucial Technology BL32G32C16S4B.16FB 32GB

Crucial Technology BL32G32C16S4B.16FB 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Crucial Technology CT8G4DFS8266.K8FB 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Patriot Memory (PDP Systems) PSD44G213381 4GB

Patriot Memory (PDP Systems) PSD44G213381 4GB

Crucial Technology CT2K102464BD160B 8GB

Crucial Technology CT2K102464BD160B 8GB

Corsair CMSX8GX4M2A2400C16 4GB

Corsair CMSX8GX4M2A2400C16 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6AFR8N

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Kingston KHX2133C14D4/8G 8GB

Kingston KHX2133C14D4/8G 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT8G4SFD824A.C16FF 8GB

Crucial Technology CT8G4SFD824A.C16FF 8GB