Nanya Technology M2Y51264TU88B0B-3C 512MB vs Kingston 9905622-058.A00G 8GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Kingston 9905622-058.A00G 8GB

Kingston 9905622-058.A00G 8GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Kingston 9905622-058.A00G 8GB

需要考虑的原因
Kingston 9905622-058.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 54

左右 -69% 更低的延时
更快的写入速度，GB/s

10.8 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 9905622-058.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 32
读取速度，GB/s

3,573.5 15.5
写入速度，GB/s

1,308.1 10.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 2801

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5173QH0-YK0 4GB

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INTENSO M418039 8GB

INTENSO M418039 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Kingston 9905622-058.A00G 8GB

Kingston 9905622-058.A00G 8GB

SK Hynix HYMP112S64CP6-S6 1GB

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Micron Technology 16ATF2G64AZ-2G3B1 16GB

Micron Technology 16ATF2G64AZ-2G3B1 16GB

Kingston 99U5428-101.A00LF 8GB

Kingston 99U5428-101.A00LF 8GB

G Skill Intl F4-3200C14-16GTRG 16GB

G Skill Intl F4-3200C14-16GTRG 16GB