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Nanya Technology M2Y51264TU88B0B-3C 512MB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
比较
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Patriot Memory (PDP Systems) PSD416G21332S 16GB
总分
Nanya Technology M2Y51264TU88B0B-3C 512MB
总分
Patriot Memory (PDP Systems) PSD416G21332S 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB
报告一个错误
更快的读取速度,GB/s
3
10.3
测试中的平均数值
需要考虑的原因
Patriot Memory (PDP Systems) PSD416G21332S 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
54
左右 -80% 更低的延时
更快的写入速度,GB/s
9.5
1,308.1
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Nanya Technology M2Y51264TU88B0B-3C 512MB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
54
30
读取速度,GB/s
3,573.5
10.3
写入速度,GB/s
1,308.1
9.5
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
371
1651
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM的比较
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB RAM的比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMU32GX4M2C3200C16 16GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HMA41GR7MFR4N-TF 8GB
AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF1G64HZ-3G2R1 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CT4G4DFS8213.C8FAR1 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Wilk Elektronik S.A. GY2666D464L16/8G 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C16-8GTZKW 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston KHX2666C13/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6AFR8N-TF 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M471A1G43DB0-CPB 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2133C15-8GIS 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9965643-002.A01G 4GB
ASint Technology SSA302G08-EGN1C 4GB
Crucial Technology CT8G4SFRA266.M16FG 8GB
报告一个错误
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Bug description
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