Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung M393A2K40BB0-CPB 16GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

Samsung M393A2K40BB0-CPB 16GB

需要考虑的原因
Samsung M393A2K40BB0-CPB 16GB

报告一个错误

更快的读取速度，GB/s

5.3 3

测试中的平均数值
更快的写入速度，GB/s

4.2 1,308.1

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung M393A2K40BB0-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 54
读取速度，GB/s

3,573.5 5.3
写入速度，GB/s

1,308.1 4.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

371 1277

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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Kingston 99U5474-038.A00LF 4GB

Apacer Technology 78.C2GFP.C700B 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 16ATF2G64HZ-2G3B2 16GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB