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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
比较
Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Crucial Technology BL8G26C16U4R.8FD 8GB
总分
Nanya Technology NT2GC64B8HC0NS-CG 2GB
总分
Crucial Technology BL8G26C16U4R.8FD 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
需要考虑的原因
Crucial Technology BL8G26C16U4R.8FD 8GB
报告一个错误
更快的读取速度,GB/s
15.7
11.7
测试中的平均数值
更快的写入速度,GB/s
13.3
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
29
读取速度,GB/s
11.7
15.7
写入速度,GB/s
8.4
13.3
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1578
3159
Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较
Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BL8G26C16U4R.8FD 8GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFD824A.M16FB 8GB
G Skill Intl F3-19200CL9-4GBZMD 4GB
Samsung M393A5143DB0-CRC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CMSX32GX4M1A2666C18 32GB
Kingston ACR16D3LS1KNG/8G 8GB
Corsair CMK16GX4M4B3300C16 4GB
Kingston 9965525-140.A00LF 8GB
Crucial Technology BLS4G4D26BFSB.8FBR2 4GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK32GX4M2B3000C15 16GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
A-DATA Technology VDQVE1B16 2GB
Crucial Technology CT16G4DFD8213.C16FBD 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Corsair CMW32GX4M2D3600C18 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3000C15-8GRK 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C18-8GTZRX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M4A2800C16 4GB
报告一个错误
×
Bug description
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