Nanya Technology NT2GC64B8HC0NS-CG 2GB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

G Skill Intl F4-3200C15-16GTZSW 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB

报告一个错误

更快的读取速度，GB/s

11.8 11.7

测试中的平均数值
更快的写入速度，GB/s

10.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

G Skill Intl F4-3200C15-16GTZSW 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

11.7 11.8
写入速度，GB/s

8.4 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1578 2605

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

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Samsung M471A1A43DB0-CPB 8GB

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Apacer Technology 78.C1GMW.AUC0B 8GB

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Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Golden Empire CL18-22-22 D4-3600 16GB

Golden Empire CL18-22-22 D4-3600 16GB

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Crucial Technology BL16G36C16U4B.M8FB1 16GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

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Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Kingston XJ69DF-MIE2 8GB

Kingston XJ69DF-MIE2 8GB

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Kingston 99U5403-036.A00G 4GB

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB