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Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs G Skill Intl F4-3200C15-16GTZSW 16GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
G Skill Intl F4-3200C15-16GTZSW 16GB

G Skill Intl F4-3200C15-16GTZSW 16GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 31
    左右 10% 更低的延时
G Skill Intl F4-3200C15-16GTZSW 16GB 需要考虑的原因
G Skill Intl F4-3200C15-16GTZSW 16GB
报告一个错误
  • 更快的读取速度，GB/s
    11.8 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
G Skill Intl F4-3200C15-16GTZSW 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 31
  • 读取速度，GB/s
    11.7 left arrow 11.8
  • 写入速度，GB/s
    8.4 left arrow 10.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 2605

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

G Skill Intl F4-3200C15-16GTZSW 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2666C18-32GVK 32GB
G Skill Intl F4-2666C18-32GVK 32GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK64GX4M4D3000C16 16GB
Corsair CMK64GX4M4D3000C16 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
Crucial Technology BL8G32C16U4B.M8FE 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Mushkin 99[2/7/4]192[F/T] 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
Crucial Technology CT8G4DFS8266.M8FJ 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Corsair CMD32GX4M4E4000C19 8GB
Corsair CMD32GX4M4E4000C19 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
Crucial Technology CT8G4DFD824A.C16FADP 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
G Skill Intl F4-3333C16-4GRRD 4GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3000C15-8GRKB 8GB
G Skill Intl F4-3000C15-8GRKB 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M393A4K40BB1-CRC 32GB
Samsung M393A4K40BB1-CRC 32GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston KTP9W1-MIE 16GB
Kingston KTP9W1-MIE 16GB
内存RAM
Crucial Technology CT51264AA667.M16FC 4GB
Crucial Technology CT51264AA667.M16FC 4GB
Apacer Technology 78.D1GMM.AU10B 16GB
Apacer Technology 78.D1GMM.AU10B 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM