Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Kingston 99U5469-042.A00LF 4GB

总分

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分

Kingston 99U5469-042.A00LF 4GB

Kingston 99U5469-042.A00LF 4GB

差异规格评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB

需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB

报告一个错误

更快的读取速度，GB/s

11.7 11

测试中的平均数值
更快的写入速度，GB/s

8.4 6.3

测试中的平均数值

Kingston 99U5469-042.A00LF 4GB

需要考虑的原因
Kingston 99U5469-042.A00LF 4GB

报告一个错误

规格

完整的技术规格清单

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Kingston 99U5469-042.A00LF 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

28 28
读取速度，GB/s

11.7 11.0
写入速度，GB/s

8.4 6.3
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

1578 1596

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB

Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Samsung M3 78T3354BZ0-CCC 256MB

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Samsung DDR3 8GB 1600MHz 8GB

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Micron Technology 8G2666CL19 8GB

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Essencore Limited KD48GS88J-26N1900 8GB

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AMD R748G2400S2S 8GB

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Elpida EBJ40UG8BBU0-GN-F 4GB

Teikon TMA81GU6AFR8N-UHSC 8GB

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AMD R5S38G1601U2S 8GB

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A-DATA Technology DDR4 3000 2OZ 8GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB