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Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M393A2K43CB1-CRC 16GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB vs Samsung M393A2K43CB1-CRC 16GB

总分
star star star star star
Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

总分
star star star star star
Samsung M393A2K43CB1-CRC 16GB

Samsung M393A2K43CB1-CRC 16GB

差异 规格 评论

差异

Nanya Technology NT2GC64B8HC0NS-CG 2GB 需要考虑的原因
Nanya Technology NT2GC64B8HC0NS-CG 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 33
    左右 15% 更低的延时
  • 更快的读取速度，GB/s
    11.7 left arrow 11
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 8.0
    测试中的平均数值
Samsung M393A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M393A2K43CB1-CRC 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GC64B8HC0NS-CG 2GB
Samsung M393A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 33
  • 读取速度，GB/s
    11.7 left arrow 11.0
  • 写入速度，GB/s
    8.4 left arrow 8.0
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1578 left arrow 2200

Nanya Technology NT2GC64B8HC0NS-CG 2GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
Kingston KVR16N11/8-SP 8GB

Samsung M393A2K43CB1-CRC 16GB RAM的比较

A-DATA Technology AM2U16BC4P2-B05B 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
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Kingston 9905712-034.A00G 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
Crucial Technology CT8G4SFS8266.M8FB 8GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
InnoDisk Corporation M4U0-8GSSKCSJ 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
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Kingston 9905624-008.A00G 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
V-Color Technology Inc. TD8G16C10-OC18AK 8GB
V-Color Technology Inc. TD8G16C10-OC18AK 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMU16GX4M2A2666C16 8GB
Corsair CMU16GX4M2A2666C16 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
Crucial Technology BL16G36C16U4B.M16FE1 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Teikon TMA451S6AFR8N-TFSC 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
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Kingston KMKYF9-HYA 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Kingston 99U5702-095.A00G 8GB
Kingston 99U5702-095.A00G 8GB
内存RAM