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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 20.5
    测试中的平均数值
Chun Well Technology Holding Limited D4U0832160B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 72
    左右 -125% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 32
  • 读取速度，GB/s
    4,241.0 left arrow 20.5
  • 写入速度，GB/s
    1,938.7 left arrow 14.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3379

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Chun Well Technology Holding Limited D4U0832160B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston KHX2133C13D4/8GX 8GB
Kingston KHX2133C13D4/8GX 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Corsair CMR64GX4M4C3466C16 16GB
Corsair CMR64GX4M4C3466C16 16GB
内存RAM
SK Hynix HMT42GR7AFR4C-RD 16GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM
Kingston XCCT36-MIE 16GB
Kingston XCCT36-MIE 16GB
Kingston KWTHG4-MIE 16GB
Kingston KWTHG4-MIE 16GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Kingston KF3733C19D4/16GX 16GB
Kingston KF3733C19D4/16GX 16GB
内存RAM
Micron Technology 8ATF51264AZ-2G1B1 4GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingston MSI26D4S9D8ME-16 16GB
Kingston MSI26D4S9D8ME-16 16GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
Crucial Technology BLT4G4D26AFTA.8FBD 4GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
Corsair CMT64GX4M4C3000C15 16GB
Corsair CMT64GX4M4C3000C15 16GB
内存RAM
TwinMOS 9DNPBNZB-TATP 4GB
TwinMOS 9DNPBNZB-TATP 4GB
SK Hynix HMA82GR7AFR4N-TF 16GB
SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3200C15-8GTZ 8GB
G Skill Intl F4-3200C15-8GTZ 8GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
Kingston CBD26D4U9S8MH-8 8GB
Kingston CBD26D4U9S8MH-8 8GB
内存RAM