TwinMOS 9DNPBNZB-TATP 4GB vs SK Hynix HMA82GR7AFR4N-TF 16GB

总分

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

总分

SK Hynix HMA82GR7AFR4N-TF 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

差异规格评论

差异

TwinMOS 9DNPBNZB-TATP 4GB

需要考虑的原因
TwinMOS 9DNPBNZB-TATP 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 66

左右 62% 更低的延时
更快的读取速度，GB/s

12.5 7.9

测试中的平均数值
更快的写入速度，GB/s

8.4 7.0

测试中的平均数值

SK Hynix HMA82GR7AFR4N-TF 16GB

需要考虑的原因
SK Hynix HMA82GR7AFR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

TwinMOS 9DNPBNZB-TATP 4GB

SK Hynix HMA82GR7AFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 66
读取速度，GB/s

12.5 7.9
写入速度，GB/s

8.4 7.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2180 1862

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology GD2.1542WS.001 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Corsair CMW32GX4M4D3600C18 8GB

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Kingston 99U5429-007.A00LF 2GB

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Corsair CMT32GX4M4C3200C14 8GB

Corsair VS1GB800D2 1GB

Corsair VS1GB800D2 1GB

Corsair CMK32GX4M4C3400C16 8GB

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Crucial Technology RM51264BA1339.16FR 4GB

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Kingston 9905713-035.A00G 8GB

Kingston 9905713-035.A00G 8GB

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