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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMW16GX4M2D3600C18 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Corsair CMW16GX4M2D3600C18 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Corsair CMW16GX4M2D3600C18 8GB

Corsair CMW16GX4M2D3600C18 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.3
    测试中的平均数值
Corsair CMW16GX4M2D3600C18 8GB 需要考虑的原因
Corsair CMW16GX4M2D3600C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 72
    左右 -148% 更低的延时
  • 更快的写入速度，GB/s
    15.1 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMW16GX4M2D3600C18 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 29
  • 读取速度，GB/s
    4,241.0 left arrow 18.3
  • 写入速度，GB/s
    1,938.7 left arrow 15.1
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3529

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Corsair CMW16GX4M2D3600C18 8GB RAM的比较

Samsung M378A1K43DB2-CTD 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
Samsung M378A1G43DB0-CPB 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9965525-144.A00LF 8GB
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内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
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内存RAM
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内存RAM
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