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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS16G4D240FSC.16FD 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Crucial Technology BLS16G4D240FSC.16FD 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Crucial Technology BLS16G4D240FSC.16FD 16GB

Crucial Technology BLS16G4D240FSC.16FD 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.3
    测试中的平均数值
Crucial Technology BLS16G4D240FSC.16FD 16GB 需要考虑的原因
Crucial Technology BLS16G4D240FSC.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 72
    左右 -157% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 28
  • 读取速度，GB/s
    4,241.0 left arrow 17.3
  • 写入速度，GB/s
    1,938.7 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3332

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Crucial Technology BLS16G4D240FSC.16FD 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
Crucial Technology BLS16G4D240FSC.16FD 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Kingston 9905678-029.A00G 8GB
Kingston 9905678-029.A00G 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK64GX4M8Z2933C16 8GB
Corsair CMK64GX4M8Z2933C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
Wilk Elektronik S.A. GR2133D464L15/8G 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMT64GX4M4C3200C16 16GB
Corsair CMT64GX4M4C3200C16 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingston XJ69DF-MIE 8GB
Kingston XJ69DF-MIE 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM