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Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Crucial Technology BLS4G4D26BFSB.8FB 4GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13
    测试中的平均数值
Crucial Technology BLS4G4D26BFSB.8FB 4GB 需要考虑的原因
Crucial Technology BLS4G4D26BFSB.8FB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 72
    左右 -85% 更低的延时
  • 更快的写入速度，GB/s
    13.5 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 39
  • 读取速度，GB/s
    4,241.0 left arrow 13.0
  • 写入速度，GB/s
    1,938.7 left arrow 13.5
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    677 left arrow 2808

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Chun Well Technology Holding Limited D4U0832161B 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
Micron Technology 16ATF2G64AZ-2G6E1 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
Kingston KY7N41-MID 8GB
Kingston KY7N41-MID 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin 99[2/7/4]209F 8GB
Mushkin 99[2/7/4]209F 8GB
内存RAM
Corsair VSA2GSDS667C4 2GB
Corsair VSA2GSDS667C4 2GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
Wilk Elektronik S.A. GR2133S464L15/16G 16GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Corsair CMD32GX4M4B3000C15 8GB
Corsair CMD32GX4M4B3000C15 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
Micron Technology 18ASF1G72PDZ-2G1A1 8GB
内存RAM
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMZ16GX3M2A1866C9 8GB
Corsair CMK32GX4M4B3600C16 8GB
Corsair CMK32GX4M4B3600C16 8GB
内存RAM