Hexon Technology Pte Ltd HEXON 1GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 62

左右 -68% 更低的延时
更快的写入速度，GB/s

12.6 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 37
读取速度，GB/s

3,556.6 16.0
写入速度，GB/s

1,843.6 12.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Gloway International Co. Ltd. TYA4U2666D19081C 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Zotac Technology Ltd OD48G32S816-ZHC 8GB

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Kingston 9905403-447.A00LF 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Crucial Technology CT25664BA160B.C16F 2GB

Apacer Technology 78.BAGN8.40C0B 4GB

Apacer Technology 78.BAGN8.40C0B 4GB

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Crucial Technology CT8G4DFS824A.C8FAD1 8GB

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Micron Technology 9905625-004.A03LF 8GB

AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Corsair CMD64GX4M8X4000C19 8GB

Corsair CMD64GX4M8X4000C19 8GB