Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异规格评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时
更快的读取速度，GB/s

16.7 16

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

报告一个错误

更快的写入速度，GB/s

12.6 11.8

测试中的平均数值

规格

完整的技术规格清单

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

16.7 16.0
写入速度，GB/s

11.8 12.6
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2756 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Nanya Technology M2Y51264TU88A2B-3C 512MB

Crucial Technology CT16G4SFD824A.M16FB 16GB

Crucial Technology CT16G4SFD824A.M16FB 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT8G4DFS824A.M8FB 8GB

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

Corsair CMR64GX4M4A2666C16 16GB

Corsair CMR64GX4M4A2666C16 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

A-DATA Technology AO1E34RCSV1-BF1S 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Crucial Technology BL16G26C16U4B.16FE 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3333C16-16GTZB 16GB

G Skill Intl F4-3333C16-16GTZB 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Maxsun MSD48G30Q3 8GB

Maxsun MSD48G30Q3 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Kingston KHX2400C15S4/8G 8GB

Kingston KHX2400C15S4/8G 8GB

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Gold Key Technology Co Ltd GKE800SO102408-3200 8GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Kingmax Semiconductor KSCE88F-B8MO5 2GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB