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Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2400C15-4GRK 4GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs G Skill Intl F4-2400C15-4GRK 4GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
G Skill Intl F4-2400C15-4GRK 4GB

G Skill Intl F4-2400C15-4GRK 4GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.2
    测试中的平均数值
G Skill Intl F4-2400C15-4GRK 4GB 需要考虑的原因
G Skill Intl F4-2400C15-4GRK 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 72
    左右 -85% 更低的延时
  • 更快的写入速度，GB/s
    10.7 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2400C15-4GRK 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 39
  • 读取速度，GB/s
    4,241.0 left arrow 13.2
  • 写入速度，GB/s
    1,938.7 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 2651

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

G Skill Intl F4-2400C15-4GRK 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
Team Group Inc. TEAMGROUP-UD4-3600 8GB
内存RAM
Kingston 9905624-051.A00G 8GB
Kingston 9905624-051.A00G 8GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
G Skill Intl F4-2400C15-4GRK 4GB
G Skill Intl F4-2400C15-4GRK 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CM4X4GF2133C13K4 4GB
Corsair CM4X4GF2133C13K4 4GB
内存RAM
Kingston 99U5403-468.A00LF 8GB
Kingston 99U5403-468.A00LF 8GB
Samsung M378B5173QH0-CK0 4GB
Samsung M378B5173QH0-CK0 4GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Samsung M471A5143SB1-CRC 4GB
Samsung M471A5143SB1-CRC 4GB
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
内存RAM
Corsair VS1GB800D2 1GB
Corsair VS1GB800D2 1GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
Micron Technology 16ATF2G64HZ-2G1A1 16GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMR16GX4M2F4000C19 8GB
Corsair CMR16GX4M2F4000C19 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Samsung M393A1K43BB1-CTD 8GB
Samsung M393A1K43BB1-CTD 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
Corsair CML8GX3M2A1866C9 4GB
Corsair CML8GX3M2A1866C9 4GB
G Skill Intl F4-2666C15-8GVK 8GB
G Skill Intl F4-2666C15-8GVK 8GB
内存RAM