RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471A5143SB1-CRC 4GB
Kingston 9905711-035.A00G 8GB

Samsung M471A5143SB1-CRC 4GB vs Kingston 9905711-035.A00G 8GB

总分
star star star star star
Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

总分
star star star star star
Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB

差异 规格 评论

差异

Samsung M471A5143SB1-CRC 4GB 需要考虑的原因
Samsung M471A5143SB1-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 45
    左右 47% 更低的延时
Kingston 9905711-035.A00G 8GB 需要考虑的原因
Kingston 9905711-035.A00G 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 14.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471A5143SB1-CRC 4GB
Kingston 9905711-035.A00G 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 45
  • 读取速度，GB/s
    14.9 left arrow 16.1
  • 写入速度，GB/s
    10.6 left arrow 11.8
  • 内存带宽，mbps
    19200 left arrow 25600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2196 left arrow 2723

Samsung M471A5143SB1-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905711-035.A00G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
Crucial Technology BL8G36C16U4RL.M8FE1 8GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
Terabyte Co Ltd RCX2-16G3600A 8GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M378A5244CB0-CVF 4GB
Samsung M378A5244CB0-CVF 4GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CB16GU2666.C8ET 16GB
Crucial Technology CB16GU2666.C8ET 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
Crucial Technology BL16G30C15U4W.M16FE1 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston 9965640-035.C00G 32GB
Kingston 9965640-035.C00G 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
Crucial Technology BLS8G4D32AESCK.M8FE1 8GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Kingston 9905734-073.A00G 16GB
Kingston 9905734-073.A00G 16GB
内存RAM