Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Micron Technology 8G2666CL19 8GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 16.5

测试中的平均数值

Micron Technology 8G2666CL19 8GB

需要考虑的原因
Micron Technology 8G2666CL19 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 72

左右 -140% 更低的延时
更快的写入速度，GB/s

13.3 1,938.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8G2666CL19 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 30
读取速度，GB/s

4,241.0 16.5
写入速度，GB/s

1,938.7 13.3
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

677 3040

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Micron Technology 8G2666CL19 8GB

Micron Technology 8G2666CL19 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Kingston 9905403-090.A01LF 4GB

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Kingston KM0VW4-MID 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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G Skill Intl F4-3600C16-16GTRSC 16GB

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Kingston 9905471-006.A01LF 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2400C16-4GFX 4GB

G Skill Intl F4-2400C16-4GFX 4GB

Samsung M393B2K70DMB-YH9 16GB

Samsung M393B2K70DMB-YH9 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

G Skill Intl F4-3000C14-16GTZ 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB

Crucial Technology BLS8G4S26BFSDK.8FD 8GB