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Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Samsung M471B5273CH0-CH9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB

差异 规格 评论

差异

Samsung M471B5273CH0-CH9 4GB 需要考虑的原因
Samsung M471B5273CH0-CH9 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 48
    左右 -66% 更低的延时
  • 更快的读取速度，GB/s
    12.2 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.8 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21 更高的带宽

规格

完整的技术规格清单
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    48 left arrow 29
  • 读取速度，GB/s
    8.9 left arrow 12.2
  • 写入速度，GB/s
    5.9 left arrow 8.8
  • 内存带宽，mbps
    10600 left arrow 12800
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1420 left arrow 2036

Samsung M471B5273CH0-CH9 4GB RAM的比较

G Skill Intl F3-1600C9-4GRSL 4GB
Crucial Technology CT8G4DFS824A.M8FH 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB RAM的比较

SK Hynix HMT425S6AFR6A-PB 2GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A
内存RAM
Kingston KHX1600C9D3/4GX 4GB
Kingston KHX1600C9D3/4GX 4GB
Avant Technology J644GU44J1293NF 32GB
Avant Technology J644GU44J1293NF 32GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-2400C15-16GVR 16GB
G Skill Intl F4-2400C15-16GVR 16GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
Crucial Technology BLS8G4D240FSA.16FADG 8GB
内存RAM
Kingston HX426C16FB2/8-SP 8GB
Kingston HX426C16FB2/8-SP 8GB
Kingston 9905711-035.A00G 8GB
Kingston 9905711-035.A00G 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
内存RAM
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston 9965640-004.C00G 16GB
Kingston 9965640-004.C00G 16GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Kingston CBD32D4S2S1ME-8 8GB
Kingston CBD32D4S2S1ME-8 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Mushkin 99[2/7/4]209F 8GB
Mushkin 99[2/7/4]209F 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Samsung M378A2G43MB1-CTD 16GB
Samsung M378A2G43MB1-CTD 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
内存RAM
A-DATA Technology DDR3 1333G 2GB
A-DATA Technology DDR3 1333G 2GB
Corsair CMW16GX4M2Z3200C16 8GB
Corsair CMW16GX4M2Z3200C16 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
内存RAM