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SK Hynix HMT425S6AFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
比较
SK Hynix HMT425S6AFR6A-PB 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
总分
SK Hynix HMT425S6AFR6A-PB 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
差异
规格
评论
差异
需要考虑的原因
SK Hynix HMT425S6AFR6A-PB 2GB
报告一个错误
低于PassMark测试中的延时,ns
28
29
左右 3% 更低的延时
更快的读取速度,GB/s
12.6
12.2
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
报告一个错误
更快的写入速度,GB/s
8.8
8.2
测试中的平均数值
规格
完整的技术规格清单
SK Hynix HMT425S6AFR6A-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB
主要特点
存储器类型
DDR3
DDR3
PassMark中的延时,ns
28
29
读取速度,GB/s
12.6
12.2
写入速度,GB/s
8.2
8.8
内存带宽,mbps
12800
12800
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
排名PassMark (越多越好)
1822
2036
SK Hynix HMT425S6AFR6A-PB 2GB RAM的比较
Crucial Technology CT51264BF160BJ.C8F 4GB
SK Hynix HMT325S6CFR8C-PB 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8A-PB 4GB RAM的比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK16GX4M1C3000C16 16GB
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Corsair CMK16GX4M2D3600C18 8GB
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Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Elpida EBJ40EG8BFWB-JS-F 4GB
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Samsung M391B5673FH0-CH9 2GB
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Kingston 9965684-013.A00G 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology 76.D305G.D390B 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
报告一个错误
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Bug description
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