Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Ramaxel Technology RMSA3300MH78HBF-2666 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 14.6

测试中的平均数值

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

需要考虑的原因
Ramaxel Technology RMSA3300MH78HBF-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 72

左右 -140% 更低的延时
更快的写入速度，GB/s

12.0 1,938.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 30
读取速度，GB/s

4,241.0 14.6
写入速度，GB/s

1,938.7 12.0
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

677 2770

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F5-6400J3239G16G 16GB

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A-DATA Technology VDQVE1B16 2GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Corsair CMW16GX4M2Z3600C18 8GB

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Kingston ACR16D3LS1NGG/4G 4GB

Kingston ACR16D3LS1NGG/4G 4GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

G Skill Intl F4-2800C16-4GRR 4GB

G Skill Intl F4-2800C16-4GRR 4GB

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Crucial Technology BLS8G4D240FSEK.8FBD 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Micron Technology 16ATF2G64HZ-2G3E2 16GB

Micron Technology 16ATF2G64HZ-2G3E2 16GB