RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1K43BB1-CTD 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Samsung M378A1K43BB1-CTD 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
Samsung M378A1K43BB1-CTD 16GB

Samsung M378A1K43BB1-CTD 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.3
    测试中的平均数值
Samsung M378A1K43BB1-CTD 16GB 需要考虑的原因
Samsung M378A1K43BB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 72
    左右 -132% 更低的延时
  • 更快的写入速度，GB/s
    13.4 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Samsung M378A1K43BB1-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 31
  • 读取速度，GB/s
    4,241.0 left arrow 17.3
  • 写入速度，GB/s
    1,938.7 left arrow 13.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    677 left arrow 2762

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

Samsung M378A1K43BB1-CTD 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Kingston ACR24D4S7D8MB-16 16GB
Kingston ACR24D4S7D8MB-16 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMT16GX4M2C3200C14 8GB
Corsair CMT16GX4M2C3200C14 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M4B3400C16 4GB
Corsair CMK16GX4M4B3400C16 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CM4X32GC3200C16K2E 32GB
Corsair CM4X32GC3200C16K2E 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9905624-045.A00G 8GB
Kingston 9905624-045.A00G 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Apacer Technology GD2.1129WH.001 16GB
Apacer Technology GD2.1129WH.001 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMU64GX4M4C3200C16 16GB
Corsair CMU64GX4M4C3200C16 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM