Nanya Technology NT2GT64U8HD0BN-AD 2GB vs Samsung M378A2K43EB1-CWE 16GB

总分

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分

Samsung M378A2K43EB1-CWE 16GB

Samsung M378A2K43EB1-CWE 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 18.5

测试中的平均数值

Samsung M378A2K43EB1-CWE 16GB

需要考虑的原因
Samsung M378A2K43EB1-CWE 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 72

左右 -118% 更低的延时
更快的写入速度，GB/s

13.8 1,938.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Samsung M378A2K43EB1-CWE 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

72 33
读取速度，GB/s

4,241.0 18.5
写入速度，GB/s

1,938.7 13.8
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

677 3341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4SFRA32A.C4FE 8GB

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A-DATA Technology AM2P24HC8T1-BBFS 8GB

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Samsung M393B1K70QB0-CK0 8GB

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Kingston KHX2400C12D4/16GX 16GB

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Corsair CMH32GX4M4D3600C18 8GB

Corsair CMH32GX4M4D3600C18 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CM4X8GE2400C15K4 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Corsair CMWX16GC3600C18W2D 16GB

Corsair CMWX16GC3600C18W2D 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CM4X8GF2666C18S2 8GB

Corsair CM4X8GF2666C18S2 8GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Eudar Technology Inc. 8GXMP2666CL16 8GB

Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Kingston 9905702-014.A00G 8GB

Kingston 9905702-014.A00G 8GB