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Nanya Technology NT2GT64U8HD0BN-AD 2GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB vs V-Color Technology Inc. TL48G30S8KSRGB15 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

总分
star star star star star
V-Color Technology Inc. TL48G30S8KSRGB15 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BN-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BN-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.7
    测试中的平均数值
V-Color Technology Inc. TL48G30S8KSRGB15 8GB 需要考虑的原因
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 72
    左右 -300% 更低的延时
  • 更快的写入速度，GB/s
    16.2 left arrow 1,938.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BN-AD 2GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    72 left arrow 18
  • 读取速度，GB/s
    4,241.0 left arrow 19.7
  • 写入速度，GB/s
    1,938.7 left arrow 16.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    677 left arrow 3597

Nanya Technology NT2GT64U8HD0BN-AD 2GB RAM的比较

Protocol Engines Kingrock 800 2GB 2GB
Patriot Memory (PDP Systems) PSD22G8002S 2GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB RAM的比较

Micron Technology 8ATF1G64AZ-3G2R1 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/4G 4GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Corsair CMK32GX4M2B3333C16 16GB
Corsair CMK32GX4M2B3333C16 16GB
内存RAM
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
Apacer Technology 78.DAGP2.4030B 16GB
Apacer Technology 78.DAGP2.4030B 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
Crucial Technology CT16G4SFD824A.C16FDD 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology TEAMGROUP-UD4-2400 16GB
Micron Technology TEAMGROUP-UD4-2400 16GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
Crucial Technology BLS8G4D30AESEK.M8FE 8GB
内存RAM
Kingston KF2666C15S4/8G 8GB
Kingston KF2666C15S4/8G 8GB
Kingston KF3200C20S4/8G 8GB
Kingston KF3200C20S4/8G 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
Crucial Technology CT4G4DFS824A.C8FBD1 4GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-3600C16-16GTZRC 16GB
G Skill Intl F4-3600C16-16GTZRC 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK32GX4M4B3200C16 8GB
Corsair CMK32GX4M4B3200C16 8GB
内存RAM
G Skill Intl F3-17000CL9-4GBXLD 4GB
G Skill Intl F3-17000CL9-4GBXLD 4GB
Super Talent F3200UA8G 8GB
Super Talent F3200UA8G 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Team Group Inc. Team-Elite-2133 4GB
Team Group Inc. Team-Elite-2133 4GB
内存RAM