Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3000C14-16GVK 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值
更快的写入速度，GB/s

2,256.8 13.3

测试中的平均数值

G Skill Intl F4-3000C14-16GVK 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVK 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 64

左右 -113% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-3000C14-16GVK 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 30
读取速度，GB/s

4,651.3 17.0
写入速度，GB/s

2,256.8 13.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 3428

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3000C14-16GVK 16GB

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G Skill Intl F3-1333C9-4GIS 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK32GX4M2B3333C16 16GB

Corsair CMK32GX4M2B3333C16 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston 9905471-006.A00LF 4GB

Samsung M393A2G40EB1-CRC 16GB

Samsung M393A2G40EB1-CRC 16GB

Team Group Inc. ZEUS-2133 8GB

Team Group Inc. ZEUS-2133 8GB

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Corsair CMD128GX4M8B3200C16 16GB