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Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3600C17-8GTZSW 8GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
G Skill Intl F4-3600C17-8GTZSW 8GB

G Skill Intl F4-3600C17-8GTZSW 8GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 21.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 17.7
    测试中的平均数值
G Skill Intl F4-3600C17-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3600C17-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 64
    左右 -276% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3600C17-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 17
  • 读取速度，GB/s
    4,651.3 left arrow 21.6
  • 写入速度，GB/s
    2,256.8 left arrow 17.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3702

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

G Skill Intl F4-3600C17-8GTZSW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3600C17-8GTZSW 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Asgard VMA44UG-MEC1U2AW1 8GB
Asgard VMA44UG-MEC1U2AW1 8GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston RB24D4U7S8MB-8 8GB
Kingston RB24D4U7S8MB-8 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingston X0N6VG-HYD2 16GB
Kingston X0N6VG-HYD2 16GB
内存RAM
Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3000C15-8GRBB 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M2D3200C16 8GB
Corsair CMK16GX4M2D3200C16 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
Crucial Technology BLE4G4D26AFEA.8FAD 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
INTENSO 5641160 8GB
INTENSO 5641160 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Corsair CM4X8GE3000C15K4 8GB
Corsair CM4X8GE3000C15K4 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
Team Group Inc. TEAMGROUP-UD4-3200 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Maxsun MSD48G30Q3 8GB
Maxsun MSD48G30Q3 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600 16GB
Chun Well Technology Holding Limited CL19-20-20 D4-3600
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3200C16-8GVR 8GB
G Skill Intl F4-3200C16-8GVR 8GB
内存RAM