Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-4000C18-16GTZN 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F4-4000C18-16GTZN 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 20.1

测试中的平均数值
更快的写入速度，GB/s

2,256.8 16.4

测试中的平均数值

G Skill Intl F4-4000C18-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-4000C18-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 64

左右 -106% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-4000C18-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 31
读取速度，GB/s

4,651.3 20.1
写入速度，GB/s

2,256.8 16.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

837 3823

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Good Wealth Technology Ltd. 8GB

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G Skill Intl F4-4000C18-16GTZN 16GB

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Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N

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Kingston 99U5403-465.A00LF 8GB

Corsair CMT32GX4M2K4000C19 16GB

Corsair CMT32GX4M2K4000C19 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Kingston KHX2666C13/16GX 16GB

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Crucial Technology CT102464BF160B-16F 8GB

Golden Empire CL16-16-16 D4-2400 8GB

Golden Empire CL16-16-16 D4-2400 8GB