Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Kingston 9905598-009.A00G 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Kingston 9905598-009.A00G 8GB

Kingston 9905598-009.A00G 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 13.5

测试中的平均数值
更快的写入速度，GB/s

2,256.8 10.4

测试中的平均数值

Kingston 9905598-009.A00G 8GB

需要考虑的原因
Kingston 9905598-009.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 64

左右 -129% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston 9905598-009.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 28
读取速度，GB/s

4,651.3 13.5
写入速度，GB/s

2,256.8 10.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

837 2638

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M395T2863QZ4-CF76 1GB

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Samsung M471A2K43EB1-CTD 16GB

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Avant Technology J642GU42J2320NQ 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Hyundai Inc AR36C18S8K2HU416R 8GB

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Samsung M378A5244CB0-CRC 4GB

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A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

Ramaxel Technology RMUA5120MB86H9F2400 4GB

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Samsung M378B5273CH0-CH9 4GB

Kingston HP26D4S9S8MHF-8 8GB

Kingston HP26D4S9S8MHF-8 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Samsung M471A2K43DB1-CTD 16GB

Samsung M471A2K43DB1-CTD 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB