Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Kingston 9965669-027.A00G 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Kingston 9965669-027.A00G 16GB

Kingston 9965669-027.A00G 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 12.5

测试中的平均数值

Kingston 9965669-027.A00G 16GB

需要考虑的原因
Kingston 9965669-027.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

44 64

左右 -45% 更低的延时
更快的写入速度，GB/s

9.7 2,256.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Kingston 9965669-027.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 44
读取速度，GB/s

4,651.3 12.5
写入速度，GB/s

2,256.8 9.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2452

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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Neo Forza GKE160SO204808-3200 16GB

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AMD R5S38G1601U2S 8GB

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Micron Technology 16ATF1G64HZ-2G1A2 8GB

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Corsair CM4X8GE2400C16K4 8GB

Corsair CM4X8GE2400C16K4 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Corsair CMK128GX4M4A2666C16 32GB

Corsair CMK128GX4M4A2666C16 32GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Micron Technology CT8G4DFD8213.16FA2 8GB

Samsung M471B1G73DB0-YK0 8GB

Samsung M471B1G73DB0-YK0 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Micron Technology 18ASF1G72AZ-2G1B1 8GB

Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F4-3000C16-16GSXWB 16GB