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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 16ATF2G64HZ-2G6H1 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G6H1 16GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 14.7
    测试中的平均数值
Micron Technology 16ATF2G64HZ-2G6H1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G6H1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 64
    左右 -94% 更低的延时
  • 更快的写入速度，GB/s
    8.8 left arrow 2,256.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 33
  • 读取速度，GB/s
    4,651.3 left arrow 14.7
  • 写入速度，GB/s
    2,256.8 left arrow 8.8
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2498

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Micron Technology 16ATF2G64HZ-2G6H1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-2800C15-4GTZB 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 16ATF2G64AZ-2G1B1 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
Crucial Technology BLS4G4D26BFSB.8FE 4GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
ATP Electronics Inc. A4G08QA8BNPBSE 8GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
Crucial Technology CT8G4DFS632A.M4FB 8GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMU64GX4M4C3000C15 16GB
Corsair CMU64GX4M4C3000C15 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Smart Modular SF464128CKHIWDFSEG 4GB
Smart Modular SF464128CKHIWDFSEG 4GB
内存RAM