Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Micron Technology 16ATF2G64HZ-3G2J1 16GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Micron Technology 16ATF2G64HZ-3G2J1 16GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 15.4

测试中的平均数值
更快的写入速度，GB/s

2,256.8 12.4

测试中的平均数值

Micron Technology 16ATF2G64HZ-3G2J1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-3G2J1 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 64

左右 -88% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Micron Technology 16ATF2G64HZ-3G2J1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 34
读取速度，GB/s

4,651.3 15.4
写入速度，GB/s

2,256.8 12.4
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

837 2974

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C16-16GTRS 16GB

G Skill Intl F4-3600C16-16GTRS 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

InnoDisk Corporation M4S0-4GSSNCIK 4GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMD16GX4M2B3466C16 8GB

Corsair CMW32GX4M2Z3600C18 16GB

Corsair CMW32GX4M2Z3600C18 16GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Corsair CMSX16GX4M2A2400C16 8GB

Corsair CMSX16GX4M2A2400C16 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Samsung M386A2G40DB0-CPB 16GB

Samsung M386A2G40DB0-CPB 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

G Skill Intl F4-2400C17-16GSXF 16GB

G Skill Intl F4-2400C17-16GSXF 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X8GD3000C15K4 8GB

Corsair CM4X8GD3000C15K4 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Corsair CMK64GX4M82800C14 8GB

Corsair CMK64GX4M82800C14 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Kingston 9965669-005.A01G 16GB

Kingston 9965669-005.A01G 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 8ATF1G64AZ-2G1B1 8GB

Kingston 8ATF1G64AZ-2G1B1 8GB