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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A2K43CB1-CTD 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M471A2K43CB1-CTD 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 11.3
    测试中的平均数值
Samsung M471A2K43CB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43CB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 64
    左右 -83% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M471A2K43CB1-CTD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 35
  • 读取速度，GB/s
    4,651.3 left arrow 15.5
  • 写入速度，GB/s
    2,256.8 left arrow 11.3
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    837 left arrow 2848

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

Samsung M471A2K43CB1-CTD 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX3333C16D4/8GX 8GB
Kingston KHX3333C16D4/8GX 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
Corsair CMD16GX4M4B3200C16-R 4GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
DSL Memory D4SS1G082SH21A-B 16GB
DSL Memory D4SS1G082SH21A-B 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Kingston 9965662-010.A00G 16GB
Kingston 9965662-010.A00G 16GB
内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
Micron Technology 8ATF1G64AZ-2G3A1 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
内存RAM
Kingston HP32D4S2S1ME-4 4GB
Kingston HP32D4S2S1ME-4 4GB
G Skill Intl F4-3600C16-8GTZSW 8GB
G Skill Intl F4-3600C16-8GTZSW 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
SK Hynix HMA82GU6CJR8N-XN 16GB
SK Hynix HMA82GU6CJR8N-XN 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2F4400C19 8GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
G Skill Intl F4-4400C19-16GVK 16GB
G Skill Intl F4-4400C19-16GVK 16GB
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Kingston 99U5713-001.A00G 4GB
Kingston 99U5713-001.A00G 4GB
内存RAM