Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Samsung M471A5244BB0-CRC 4GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

Samsung M471A5244BB0-CRC 4GB

Samsung M471A5244BB0-CRC 4GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

更快的读取速度，GB/s

4 14

测试中的平均数值
更快的写入速度，GB/s

2,256.8 10.4

测试中的平均数值

Samsung M471A5244BB0-CRC 4GB

需要考虑的原因
Samsung M471A5244BB0-CRC 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 64

左右 -68% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Samsung M471A5244BB0-CRC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 38
读取速度，GB/s

4,651.3 14.0
写入速度，GB/s

2,256.8 10.4
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 2055

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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AMD AE34G1601U1 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix V-GeN D4H4GL26A8TL 4GB

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Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

Crucial Technology BL8G32C16U4B.M8FE 8GB

A-DATA Technology DQVE1908 512MB

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Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Avexir Technologies Corporation DDR4-2666 CL15 8GB 8GB

Kingston KP4T2F-PSB 4GB

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G Skill Intl F4-3200C14-32GTRG 32GB

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A-DATA Technology AD73I1B1672EG 2GB

Kingston KHX2133C13S4/8G 8GB

Kingston KHX2133C13S4/8G 8GB