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Nanya Technology NT2GT64U8HD0BY-AD 2GB
Transcend Information TS2GSH64V1B 16GB
比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB vs Transcend Information TS2GSH64V1B 16GB
总分
Nanya Technology NT2GT64U8HD0BY-AD 2GB
总分
Transcend Information TS2GSH64V1B 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
更快的读取速度,GB/s
4
12
测试中的平均数值
需要考虑的原因
Transcend Information TS2GSH64V1B 16GB
报告一个错误
低于PassMark测试中的延时,ns
30
64
左右 -113% 更低的延时
更快的写入速度,GB/s
8.3
2,256.8
测试中的平均数值
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Transcend Information TS2GSH64V1B 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
64
30
读取速度,GB/s
4,651.3
12.0
写入速度,GB/s
2,256.8
8.3
内存带宽,mbps
6400
17000
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
837
2034
Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较
G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB
Transcend Information TS2GSH64V1B 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. W-HK26S16G 16GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS4G4D26BFSC.8FBR2 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-2400C15-16GFT 16GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-3000C15-8GRBB 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston 9905702-017.A00G 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Kingston HP32D4S2S1ME-4 4GB
Kingston ACR26D4S9S8KA-8 8GB
Kingston 9905471-006.A00LF 4GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Samsung 1600 CL10 Series 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
Crucial Technology CT51264BD160B.C16F 4GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
报告一个错误
×
Bug description
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