Samsung M3 78T2863QZS-CF7 1GB vs Micron Technology 16ATF2G64HZ-2G3B1 16GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.7

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G3B1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 69

左右 -77% 更低的延时
更快的写入速度，GB/s

8.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 39
读取速度，GB/s

4,217.2 13.7
写入速度，GB/s

1,857.7 8.5
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

668 2364

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Teikon TMA851U6AFR6N-UHHC 4GB

Teikon TMA851U6AFR6N-UHHC 4GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

SK Hynix HMAA4GS6AJR8N-XN 32GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Micron Technology 16ATF2G64HZ-2G3B1 16GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Kllisre M471A3243BB0-CP50 16GB

Kllisre M471A3243BB0-CP50 16GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

G Skill Intl F4-4266C19-4GTZ 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CM4X16GF3200C22S2 16GB

Corsair CM4X16GF3200C22S2 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Crucial Technology CT8G4DFS8266.M8FJ 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB