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Kingston 9965433-034.A00LF 4GB
Samsung M378A1K43EB2-CWE 8GB

Kingston 9965433-034.A00LF 4GB vs Samsung M378A1K43EB2-CWE 8GB

总分
star star star star star
Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

总分
star star star star star
Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

差异 规格 评论

差异

Kingston 9965433-034.A00LF 4GB 需要考虑的原因
Kingston 9965433-034.A00LF 4GB
报告一个错误
Samsung M378A1K43EB2-CWE 8GB 需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 42
    左右 -27% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 6.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 6.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingston 9965433-034.A00LF 4GB
Samsung M378A1K43EB2-CWE 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 33
  • 读取速度，GB/s
    6.4 left arrow 17.6
  • 写入速度，GB/s
    6.7 left arrow 12.0
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1632 left arrow 2910

Kingston 9965433-034.A00LF 4GB RAM的比较

Kingston 9905584-017.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB

Samsung M378A1K43EB2-CWE 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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A-DATA Technology DQVE1908 512MB
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SK Hynix HMA451R7MFR8N-TFTD 4GB
内存RAM
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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
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Kingston 9905701-132.A00G 16GB
内存RAM