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Samsung M391B5673EH1-CH9 2GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
比较
Samsung M391B5673EH1-CH9 2GB vs Netac Technology Co Ltd EKBLACK4083016A 8GB
总分
Samsung M391B5673EH1-CH9 2GB
总分
Netac Technology Co Ltd EKBLACK4083016A 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
需要考虑的原因
Netac Technology Co Ltd EKBLACK4083016A 8GB
报告一个错误
低于PassMark测试中的延时,ns
20
26
左右 -30% 更低的延时
更快的读取速度,GB/s
19.7
12.8
测试中的平均数值
更快的写入速度,GB/s
15.5
9.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Netac Technology Co Ltd EKBLACK4083016A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
26
20
读取速度,GB/s
12.8
19.7
写入速度,GB/s
9.0
15.5
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2143
3404
Samsung M391B5673EH1-CH9 2GB RAM的比较
Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB
Netac Technology Co Ltd EKBLACK4083016A 8GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Team Group Inc. Team-Elite-1333 4GB
G Skill Intl F4-2400C16-8GRS 8GB
Samsung M393B1G70QH0-YK0 8GB
Gold Key Technology Co Ltd NMSO416F82-3200E 16GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Kingston KVR533D2N4 512MB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology BL8G32C16U4WL.M8FE1 8GB
Kingston HX318C10FK/4 4GB
A-DATA Technology AO1P29KC8T1-BY9SSB 8GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB
Kingston 99U5474-010.A00LF 2GB
Samsung M471A2K43BB1-CRC 16GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT16G4SFD832A.C16FP 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Virtium Technology Inc. VL33A1G63F-N6S 8GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology AFSD416ES1P 16GB
Kingston KHX1600C9S3L/8G 8GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Crucial Technology CT8G4DFS632A.M4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
报告一个错误
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Bug description
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