Samsung M393B1G70BH0-YK0 8GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 49

左右 -172% 更低的延时
更快的读取速度，GB/s

20.2 10.2

测试中的平均数值
更快的写入速度，GB/s

16.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 18
读取速度，GB/s

10.2 20.2
写入速度，GB/s

8.1 16.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 3536

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT451S6AFR8A-PB 4GB

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Corsair CMW32GX4M2E3200C16 16GB

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G Skill Intl F4-3200C14-16GFX 16GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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G Skill Intl F4-4000C18-16GTZN 16GB

G Skill Intl F4-4000C18-16GTZN 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Crucial Technology BLS16G4D240FSB.16FD 16GB

Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CB8GU2400.C8JT 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Kingston 99U5701-049.A00G 16GB

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