Nanya Technology NT2GT64U8HD0BY-AD 2GB vs V-GEN D4H8GS24A8 8GB

总分

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分

V-GEN D4H8GS24A8 8GB

V-GEN D4H8GS24A8 8GB

差异规格评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB

需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB

报告一个错误

低于PassMark测试中的延时，ns

64 92

左右 30% 更低的延时
更快的读取速度，GB/s

4 15.1

测试中的平均数值

V-GEN D4H8GS24A8 8GB

需要考虑的原因
V-GEN D4H8GS24A8 8GB

报告一个错误

更快的写入速度，GB/s

8.2 2,256.8

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT2GT64U8HD0BY-AD 2GB

V-GEN D4H8GS24A8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

64 92
读取速度，GB/s

4,651.3 15.1
写入速度，GB/s

2,256.8 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

837 1640

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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SK Hynix HYMP112U64CP8-S6 1GB

SK Hynix HYMP112U64CP8-S6 1GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

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Kingston 9965589-031.D01G 2GB