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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J644GU44J2320NQ 32GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Avant Technology J644GU44J2320NQ 32GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Avant Technology J644GU44J2320NQ 32GB

Avant Technology J644GU44J2320NQ 32GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 43
    左右 2% 更低的延时
Avant Technology J644GU44J2320NQ 32GB 需要考虑的原因
Avant Technology J644GU44J2320NQ 32GB
报告一个错误
  • 更快的读取速度，GB/s
    16.8 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.4 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J644GU44J2320NQ 32GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 43
  • 读取速度，GB/s
    9.7 left arrow 16.8
  • 写入速度，GB/s
    6.0 left arrow 15.4
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3282

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Avant Technology J644GU44J2320NQ 32GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Corsair CMK8GX4M2B3866C18 4GB
Corsair CMK8GX4M2B3866C18 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J644GU44J2320NQ 32GB
Avant Technology J644GU44J2320NQ 32GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Corsair CMK64GX4M4B3466C16 16GB
Corsair CMK64GX4M4B3466C16 16GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
G Skill Intl F4-2400C15-4GIS 4GB
G Skill Intl F4-2400C15-4GIS 4GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-4000C18-16GTZR 16GB
G Skill Intl F4-4000C18-16GTZR 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston 9965669-031.A00G 16GB
Kingston 9965669-031.A00G 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Kingston 9905702-008.A00G 8GB
Kingston 9905702-008.A00G 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
G Skill Intl F4-2800C15-8GTXG 8GB
G Skill Intl F4-2800C15-8GTXG 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
A-DATA Technology DDR4 2400 2OZ 8GB
A-DATA Technology DDR4 2400 2OZ 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM